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sf6 o2 measurement tools

May 28, 2012Inert Gas Rebreathing method enables non invasive measurement of cardiac output (CO) using the single rebreathing method. A mixture of blood soluble (N2O) and blood insoluble gas (SF6) and environmental air is inhaled and the amount of N2O, SF6, O2 and CO2 is measured by a photoacoustic analysator. The length of a measurement is about 1 minute.

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  • NNCI Site Tool Type Gases Application Wafer size SF6, C4F8

    NNCI Site Tool Type Gases Application Wafer size Cornell Plasmatherm. SF6, C4F8, O2, Ar: Deep silicon etch: 100mm Versaline ICP; Deep Ge etch DSEIII SOI; Cornell Unaxis 770 ICP; SF6, C4F8, O2, Ar Deep silicon etch; 100mm Mixed silicon etch 150mm; Release Cornell Ptherm 770 left chamber ICP; Cl2, BCl3, SF6, O2, N2, metal etch 100mm right chamber

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  • EU Report Highlights Sulphur Hexafluoride Countdown

    Test and Measurement; EU Report Highlights Sulphur Hexafluoride Countdown, Replacements. based Novec 5110 mixture with CO2 and O2 was the first SF6 alternative installed in a HV GIS, located in Zurich in 2015. GIS using a Novec 4710, CO2 and O2 mixture was first installed in a 145kV GIS in 2017, and is now used at 15 sites with a total of

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  • Noninvasive Measurement of Cardiac Output in Pulmonary

    May 28, 2012Inert Gas Rebreathing method enables non invasive measurement of cardiac output (CO) using the single rebreathing method. A mixture of blood soluble (N2O) and blood insoluble gas (SF6) and environmental air is inhaled and the amount of N2O, SF6, O2 and CO2 is measured by a photoacoustic analysator. The length of a measurement is about 1 minute.

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  • Alibaba Manufacturer Directory - Suppliers, Manufacturers

    Buy Hot products SF6 O2 humidity and and find similar products on Alibaba.com

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  • Electron Transport Coefficients and Effective

    The electron drift velocity, electron energy distribution function (EEDF), density-normalized effective ionization coefficient and density-normalized longitudinal diffusion velocity are calculated in SF6-O2 and SF6-Air mixtures. The experimental results from a pulsed Townsend discharge are plotted for comparison with the numerical results. The reduced field strength varies from 40 Td to 500 Td

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  • Control of sidewall slope in silicon vias using SF6∕O2

    Sep 23, 2005The etching of anisotropic blind vias in silicon with diameters of 5–10μm and an aspect ratio ∼2–4 with controlled sidewall inclination is reported. The motivation for this work is the creation of a vertical, or three dimensional interconnect. Via formation by reactive ion etch (RIE) processing is the focus of this project. Arrays of vias have been etched in 125 mm diam silicon (100

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  • Deep trench plasma etching of single crystal silicon using

    A new magnetron ion etching (MIE) process has been developed to etch 50 μm deep trenches into single crystal silicon. The optimized SF 6 /O 2 gas mixture results in a nearly vertical etch profile with a vertical to horizontal etch rate ratio of 9.4. Similar experiments were carried out on a Drytek reactive ion etching (RIE) system. Results indicate that although the sidewall angle, etch rate

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  • Mass spectrometry at a Ar/SF6/O2 chemically reactive

    Mass spectrometry at a Ar/SF6/O2 chemically reactive plasma jet Article in Physica Status Solidi (A) Applications and Materials 205(4):957 - 960 April 2008 with 51 Reads How we measure reads

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  • Measurement of electron transport and effective ionization

    Feb 03, 2006From the measurement of v e and ND L we were able to calculate the ratio between the electron mobility and the longitudinal diffusion coefficient D L /K e, which are shown plotted in figures 5 and 6 for the SF 6 –air and SF 6 –O 2 mixtures. Again, we observe a slight dependence of this ratio on the SF 6 content.

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  • Dew Point Meters Measurement Devices | CS Instruments

    Dew point measurement and monitoring in compressed air systems is essential. Drying of granulate in plastics technology, the generation and usage of various technical gases (N2, O2, Ar, H2) and a lot more applications require professional dew point measurement equipment for perfect operation.

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  • Topographic and kinetic effects of the SF6/O2 rate during

    Journal of Vacuum Science Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Volume 22, Issue 4 10.1116/1.1767825

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  • Low temperature etching of Si in high density plasma using

    Feb 01, 1995ELSEVIER Microelectronic Engineering 27 (1995) 453-456 MICROELECTRONIC ENGINEERING Low temperature etching of Si in high density plasma using SF6/O2 Johann W. Barthaa, Johann Greschnera, M. Puechb and P. Maquinb aIBM German Manufacturing Technology Center, P.O. Box 266, D-71044 Sindelfingen, Germany bALCATEL CIT, 98, avenue de Brogny-BP, F-74009

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  • Reade Advanced Materials - Useful List of Molecules- (Non

    SF6. H2. O2. N2. I2(s) SF6. SO4 (2-) BeCl2. CH4CO2. Methane (CH4) and Ethylene (C2H4) molecules. SiH4. GeH4. SnH4. C30H62 (parrifin wax) C6H14 (hexane) CS2(76) C2H4. C2H2. Non-Polar Molecule Definition: A non-polar molecule is one that the electrons are distributed more symmetrically and thus does not have an abundance of charges at the

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  • Tungsten metal gate etching in Cl2∕O2 inductively coupled

    Nov 03, 2008Plasma etching of W in a poly-Si∕TiN∕W∕HfO2 gate stack is investigated in Cl2∕O2 based plasmas. Preliminary studies have illustrated the issues induced with

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